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Light-Emitting nm-Size Silicon Using Electrochemical Anodization and Oxidation

Published online by Cambridge University Press:  28 February 2011

Toshimichi Ito ,
Toshimichi Ohta ,
Kenji Motoi ,
Osamu Arakaki  and
Akio Hiraki
Toshimichi Ito
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan.
Toshimichi Ohta
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan.
Kenji Motoi
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan.
Osamu Arakaki
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan.
Akio Hiraki
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan.
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Abstract

Porous silicon oxidized by thermal, anodic and plasma processes has been investigated mainly using transmission microscopy, ion scattering techniques for compositional depth analysis (including H) and photoluminescence (PL) measurements. Suitable thermal oxidation of PS can increases in PL peak energy: the largest peak energy attained in the present study is 2.6eV (475nm). In the case of anodic oxidation, PL excitation spectra measured suggest the presence of some effect other than the quantum confinement effect at the initial oxidation stage while the latter may be effective at the subsequent anodic oxidation stage and in the thermal oxidation process. Electroluminescence was also observed from the oxidized porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 263
Copyright
Copyright © Materials Research Society 1993

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References

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