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Lattice Mismatch Effects in GaAsP/GaAs and GaAs/GaAsP/GaAs Heterostructures

Published online by Cambridge University Press:  28 February 2011

Y.W. Choi ,
C.R. Wie  and
S.M. Vernon
Y.W. Choi
Affiliation:
State Univ. of New York at Buffalo, Dept.of Electrical and Comp. Engr. and Center for Electronic and Electrooptic Materials, Amherst New York 14260
C.R. Wie
Affiliation:
State Univ. of New York at Buffalo, Dept.of Electrical and Comp. Engr. and Center for Electronic and Electrooptic Materials, Amherst New York 14260
S.M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
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Abstract

Structural and electrical characteristics of the GaAs1-xPx / GaAs and GaAs/GaAs1-xPx/GaAs (x=0.02, 0.05, 0.08, 0.16 and 0.32) hetero-epitaxial systems have been investigated using X-ray rocking curve technique, Optical Beam Induced Current imaging, Nomarski Micrograph, and I-V-T and C-V measurements. The rocking curve Full Width Half Maximum of the GaAs1-xPx epilayer increased sharply at x=0.16 due to a decreased layer thickness and increased in-plane mismatch. The cross-hatched line density in the OBIC image and Nomarski Micrograph increases as the lattice mismatch increases. The epilayer surface morphology is dependent on the layer thickness. The forward I-V characteristics of Au-GaAsP/GaAs and Au-GaAs/GaAsP/GaAs Schottky diodes showed an increased tunneling current for an the increased lattice mismatch. For GaAsP/GaAs structure with a higher phosphorus composition, Fermi-level pinning caused by misfit dislocation was observed. Au-GaAs/GaAsP/GaAs Schottky diodes show an excess current at the low temperature, high field range which, we believe, is due to defect related tunneling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 789
Copyright
Copyright © Materials Research Society 1990

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