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Lateral Extension of Dislocations in Nmos Ic.
Published online by Cambridge University Press: 28 February 2011
Abstract
Dislocations extending through channel regions of NMOSFETs with submicron gate lengths have been observed. Additionally, arrays of dislocations in the field regions of IC's have also been observed and found to be generating from the corners of the first n+ region during subsequent high temperature process.
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