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Irradiation Effects of Ar-Cluster Ion Beams on Si Surfaces

Published online by Cambridge University Press:  22 February 2011

G. H. Takaoka ,
G. Sugahara ,
R. E. Hummel ,
J. A. Northby ,
M. Sosnowski  and
I. Yamada
G. H. Takaoka
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainsville, FL, 32611
G. Sugahara
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainsville, FL, 32611
R. E. Hummel
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainsville, FL, 32611
J. A. Northby
Affiliation:
University of Rhode Island, Physics Department, Kingston, RI, 02881
M. Sosnowski
Affiliation:
New Jersey Institute of Technology, Department of Electrical Engineering, Newark, NJ, 07102
I. Yamada
Affiliation:
Kyoto University, Ion Beam Engineering, Sakyo, Kyoto 606-01, Japan
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Abstract

The effects of energetic Ar cluster ion impacts on Si(111) surfaces have been studied for cluster energies up to l5keV. The mean cluster size was about 1000 atoms, and the smaller sizes could be systematically excluded. Si samples irradiated at different cluster ion energies were analyzed by RBS, ellipsometry, and differential reflectometry. Implantation of Ar in samples irradiated with cluster ions was found by RBS to be detectable, but very small in comparison with samples irradiated with monomer ions of the same energy. The thickness of the damage layer as measured by both ellipsometry and differential reflectometry was also much smaller in the cluster ion irradiated samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 1005
Copyright
Copyright © Materials Research Society 1994

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References

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