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Investigation of Lateral and Vertical Profiles Enhanced by Implantation

Published online by Cambridge University Press:  21 February 2011

A. Mineji ,
K. Hamada  and
S. Saito
A. Mineji
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
K. Hamada
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
S. Saito
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

In shallow junction formation with junction depth below 0.1μm, enhanced diffusion control is essential. The purpose of this paper is to investigate the B enhanced diffusion by point defects, introduced by high dose implantation with amorphization. Ge ions were implanted to induce amorphization within the S/D region of pMOS. These results were compared with that of the B enhanced diffusion by point defects, induced by Si+ implant with non-amorphization. These results suggest that the B enhanced diffusion in lateral profiles is much smaller, compared with that in vertical profiles, when point defects were introduced by amorphization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 751
Copyright
Copyright © Materials Research Society 1996

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References

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