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Interfacial Reaction in Aluminum/Carbon Multilayer Thin Films

Published online by Cambridge University Press:  10 February 2011

K. Landry ,
H. Sieber ,
M. Sui  and
J. H. Perepezko
K. Landry
Affiliation:
Dept. of Mat. Sci. and Eng., University of Wisconsin - Madison, Madison, WI 53706, USA.
H. Sieber
Affiliation:
Dept. of Mat. Sci. and Eng., University of Wisconsin - Madison, Madison, WI 53706, USA.
M. Sui
Affiliation:
Dept. of Mat. Sci. and Eng., Northeastern University, Shenyang 110015, P R. China.
J. H. Perepezko
Affiliation:
Dept. of Mat. Sci. and Eng., University of Wisconsin - Madison, Madison, WI 53706, USA.
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Abstract

The reaction at the interface between Al and amorphous C in Al/C multilayer thin films with modulation wavelengths of about 25nm and 125nm has been investigated by differential scanning calorimetry, X-ray diffraction, transmission electron microscopy/selected area electron diffraction and high resolution transmission electron microscopy. The reaction was found to take place in two steps. The first step onsets at about 300°C, and was identified as the diffusion of C into Al. The second step starts above 400°C, at a temperature strongly dependent on the modulation wavelength of the film, and is the formation of A14C3. The carbide has been observed to nucleate and grow inside the Al layers. The multilayer structure is preserved in the samples up to at least 550°C, and Al grains start to grow at or below 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 551
Copyright
Copyright © Materials Research Society 1998

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References

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