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In-Situ Kelvin Probe Study of the SnO2 / p (a-Si:H) Interface. Effects of Hydrogen and Argon Plasma Treatment

Published online by Cambridge University Press:  25 February 2011

P. Roca i Cabarrocas
P. Roca i Cabarrocas*
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, F91128 Palaiseau Célex, France
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Abstract

We present an in-situ Kelvin probe study of the effects of hydrogen and argon plasma treatments on fluorine doped tin-oxide (SnO2) substrates, as well as the consequences of these treatments on the subsequent growth of a-Si:H. We found that the effect of both hydrogen and argon plasmas is to enhance the reactivity of SnO2 substrates in a silane plasma. Moreover, the, doping level (Fermi level) of boron doped a-Si:H layers deposited on SnO2 is reached more quickly when the substrate has been treated previously with an argon plasma. As a consequence, we expect a higher open circuit voltage (Voc) for SnO2/p-i-n solar cells in which the substrate has been treated by an argon plasma. The Kelvin probe results have been confirmed by Voc measurements on solar cells deposited on treated and untreated substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 681
Copyright
Copyright © Materials Research Society 1989

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References

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