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InGaAs/GaAs Strained-Layer QW Vertical Cavity Surface Emitting Laser Structures grown on GaAs (311)A Substrates by MBE

Published online by Cambridge University Press:  10 February 2011

M. Takahashi ,
P. Vaccaro ,
K. Fujita  and
T. Watanabe
M. Takahashi
Affiliation:
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 61.9-02 JAPAN
P. Vaccaro
Affiliation:
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 61.9-02 JAPAN
K. Fujita
Affiliation:
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 61.9-02 JAPAN
T. Watanabe
Affiliation:
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 61.9-02 JAPAN
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Abstract

We report the crystal growth conditions and lasing characteristics of InGaAs-GaAs strained-layer quantum well vertical cavity surface emitting lasers (VCSELs) grown on GaAs(311)A substrates by molecular beam epitaxy. A significantly smooth surface and high reflectivity of more than 99 % were achieved. Very flat and dislocation-free AlAs/GaAs hetero-interfaces were obtained. Furthermore, a very low threshold of 5.5 mA and current density of 270 A/cm2 have been achieved for the first time under CW operation at room temperature. In addition, we demonstrate stable polarization characteristics at high currents. These results are believed to be a consequence of both the predicted high gain and anisotropic gain distribution on the (311) surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 361
Copyright
Copyright © Materials Research Society 1996

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References

[1 ] Hayakawa, T., Kondo, M., Suyama, T., Takahashi, K., Yamamoto, S., and Hijikata, T., J. Appl. Phys. 26, L302 (1987).Google Scholar
[2] Fischer, R. J. and Vakhshoori, D., J. Vac. Sci. Technol. B 10, 986 (1992)Google Scholar
[3] Smith, D. L. and Mailhiot, C., J. Appl. Phys. 63, 2717 (1988)Google Scholar
[4] Ohtoshi, T., Kuroda, T., Niwa, A., and Tsuji, S., Appl. Phys. Lett. 65, 1886 (1994).Google Scholar
[5] Henderson, R. H. and Towe, E., J. Appl. Phys. 78, 2447 (1995).Google Scholar
[6] Decai Sun, Elias Towe, Paul Ostdiek, H., Grantham, Jeffery W., and Vansuch, Gregory. J., IEEE J. Selected Topics in Quantun Electron. 1, 674 (1995).Google Scholar
[7] Shimizu, M., Mukaihara, T., Baba, T., Koyama, F., and Iga, K., Jpn. J. Appl. Phys. 30, 1015 (1991).Google Scholar
[8] Mukaihara, T., Koyama, F., and Iga, K., Jpn. J. Appl. Phys. 31, 1389 (1992).Google Scholar
[9] Choquette, K. D., Lear, K. L., Leibenguth, R. E., and Asom, M. T., Abstracts of 51 st Annu. Devices Res. Conf., Univ. of California, Santa Barbara, CA, June 21–23, 1993.Google Scholar
[10] Yamamoto, Teiji, Inai, Makoto, Takebe, Toshihiko, and Watanabe, Toshihide, J. Vac. Sci. Technol. A, 11, 631 (1993).Google Scholar
[11] Tsutsui, K., Mizukami, H., Ishiyama, O., Nakamura, S., and Furukawa, S., Jpn. J. Appl. Phys. 29, 468 (1990).Google Scholar
[12] Yoo, H. M., Ohuchi, F. S., and Stoebe, T. G., J. Vac. Sci. Technol. B 11, 542 (1993).Google Scholar
[13] Takeuchi, T., Muraki, K., Hanamaki, Y., Fukatsu, S., Yamada, N., Ogasawara, N., Mikoshiba, N., and Shiraki, Y., J. Crystal Growth 150, 1338 (1995)Google Scholar
[14] Sato, Kenji, Fahy, Michael R., and Joyce, Bruce A., Jpn. J. Appl. Phys. 33, L905 (1994).Google Scholar
[15] Kaminska, M., Weber, Z. -L., Weber, E. R., George, T., Kortwright, J. B., Smith, F. W., Tsaur, B. -Y., and Calawa, A. R., Appl. Phys. Lett. 54, 1881 (1989)Google Scholar