Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-12-01T02:55:03.188Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Ti additions on the Texture and Dielectric Properties of LSBN-BST Complex Ceramics

Published online by Cambridge University Press:  10 February 2011

J. Portelles ,
H. Amorín ,
J. M. Siqueiros ,
F.F. Castilión ,
E. Martínez  and
S. Aguilera
J. Portelles
Affiliation:
Facultad de Fisica-IMRE, Universidad de la Habana, Vedado, La Habana 10400, Cuba Centro de Ciencias de la Materia Condensada, Universidad Nacional Autónoma de México, Apartado Postal 2681, Ensenada, Baja California, México22800
H. Amorín
Affiliation:
Facultad de Fisica-IMRE, Universidad de la Habana, Vedado, La Habana 10400, Cuba
J. M. Siqueiros
Affiliation:
Centro de Ciencias de la Materia Condensada, Universidad Nacional Autónoma de México, Apartado Postal 2681, Ensenada, Baja California, México22800
F.F. Castilión
Affiliation:
Centro de Ciencias de la Materia Condensada, Universidad Nacional Autónoma de México, Apartado Postal 2681, Ensenada, Baja California, México22800 Departamento de Polimeros y Materiales de la Universidad de Sonora (DIPM-US)
E. Martínez
Affiliation:
Centro de Investigación Cientifica y Educación Superior de Ensenada, CICESE
S. Aguilera
Affiliation:
Universidad Católica del Norte, Departamento de Fisica, Antofagasta, Chile
Get access

Abstract

The stoichiometric La-Ti doped strontium-barium niobate ceramic system was obtained for different concentrations of Titanium ions (Ti=1,3,5,10,30,50 %), where the Nb5− was substituted by Ti4+ according to the following expression Sr0.255 La0.03Bao0.7Nb2−yTiyO6−y/2 (LSBN-BST). The oxygen vacancies thus created which, together with the vacancies in the A sites of the tetragonal tungsten-bronze (TTB) material structure, have an important influence on their texture and dielectric properties, due to the crucial role of the occupancy of the crystallographic sites. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and thermoelectric analyses are reported. We report the first results for thin films of LSBNT- 7 % obtained by the PLD technique. The diffraction pattern reveals the presence of the LSBNT structure without annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 217
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Glass, A. M., J. Appl. Phys., 40 (1969), pp. 4699.Google Scholar
2. Neurgaonkar, R., Cory, W. K. and Oliver, J. R., Ferroelectrics, 51 (1983) 3.Google Scholar
3. , Salamo, Miller, M. J., Clark, W. W. III, Wood, G. L. and Sharp, E. J., Opt. Comm., 59 (1986) pp. 417.Google Scholar
4. Guerrero, F., Portelles, J. J., González, I., Fundora, A., Amorín, H., Siqueiros, J. M., Machorro, R., Solid State Communications, 101 (1997) pp. 463.Google Scholar
5. Umakantham, K., Chandramouli, K., Nageswara Rao, G. and Bhanumathi, A., Bull. Mater. Sci., 19 (1996) pp. 345.Google Scholar
6. , Xu, Li, Z., Li, W., Wang, H., and Chen, H., Physical Review B, 40 (1989) p. 40.Google Scholar
7. Jamieson, P.B., J Chem. Phys., 48 (1968) pp. 5048.Google Scholar
8. Liu, S.T. and Maciolek, R.B., Journal of Electronic Materials, 4 (1975) p. 91.Google Scholar
9. Amorín, H., Guerrero, F., Portelles, J., González, I., Fundora, A., Siqueiros, J. and Valenzuela, J., Solid State Communications (IN PRESS).Google Scholar
10. Guerrero, F., Portelles, J. J., Amorín, H., Fundora, A., Siqueiros, J. M., Hirata, G. A., Journal of European Ceramic Society, 18 (7) pp. 751–758 (1998).Google Scholar
11. Chen, A. and Zhi, Y., J. Appl. Phys., 71 (1992) pp. 6025.Google Scholar
12. Tsang-Tse, F., Nan Ti, W., Fuh-Shan, S., J. Mater. Sci. Let., 13 (1994) 1746.Google Scholar
13. Nishiwaki, S., Takahashi, J., Kodaira, K., Kishi, M., Jpn. J. Appl. Phys. Vol. 35 (1996) pp. 5137–5140.Google Scholar