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Influence of Rapid Thermal Annealing on Shallow BF2 Implantation into Pre-Amorphized Silicon

Published online by Cambridge University Press:  22 February 2011

W. Maszara ,
C. Carter ,
D. K. Sadana ,
J. Liu ,
V. Ozguz ,
J. Wortman  and
G. A. Rozgonyi
W. Maszara
Affiliation:
North Carolina State University, Raleigh, NC 27650 and Microelectronic Center of North Carolina, Research Triangle Park, NC
C. Carter
Affiliation:
North Carolina State University, Raleigh, NC 27650 and Microelectronic Center of North Carolina, Research Triangle Park, NC
D. K. Sadana
Affiliation:
North Carolina State University, Raleigh, NC 27650 and Microelectronic Center of North Carolina, Research Triangle Park, NC
J. Liu
Affiliation:
North Carolina State University, Raleigh, NC 27650 and Microelectronic Center of North Carolina, Research Triangle Park, NC
V. Ozguz
Affiliation:
North Carolina State University, Raleigh, NC 27650 and Microelectronic Center of North Carolina, Research Triangle Park, NC
J. Wortman
Affiliation:
North Carolina State University, Raleigh, NC 27650 and Microelectronic Center of North Carolina, Research Triangle Park, NC
G. A. Rozgonyi
Affiliation:
North Carolina State University, Raleigh, NC 27650 and Microelectronic Center of North Carolina, Research Triangle Park, NC
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Abstract

Low energy, shallow BF2+ implants were carried out at room or liquid nitrogen temperature into deep pre-amorphized (100) Si for better control of the dopant profile and post-annealing structural defects. Cross sectional and angle polished plan view transmission electron microscopy were used to study the structural quality of the implanted layer, while SIMS provided a chemical profile. Four types of structural defects were observed in BF2+ implanted, pre-amorphized samples following rapid thermal annealing with a halogen lamp. An in-situ ion beam annealing and the presence of F in the Si lattice were related to the creation of the defects. Good correlations between F gettering and TEM observed defects were found to exist. Implantation of B+ into a pre-amorphized Si surface and subsequent rapid thermal annealing was found to produce a wide defect-free surface layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 285
Copyright
Copyright © Materials Research Society 1984

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References

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