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The Influence of Doping on the Electronic Properties of Hydrogenated Amorphous Silicon.

Published online by Cambridge University Press:  25 February 2011

D. Herm ,
H. Wetzel  and
M. Kunst
D. Herm
Affiliation:
Hahn-Meitner Institut, Solare Energetik, D - 1000 Berlin 39, West Germany.
H. Wetzel
Affiliation:
Hahn-Meitner Institut, Solare Energetik, D - 1000 Berlin 39, West Germany.
M. Kunst
Affiliation:
Hahn-Meitner Institut, Solare Energetik, D - 1000 Berlin 39, West Germany.
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Abstract

The results of transient photoconductivity and photoinduced absorption measurements in lightly phosphorus and boron doped (0-10 ppm ) a-Si:H films at T = 300 K are presented. From the observed increase of minority carrier trapping with doping it is concluded that even light doping leads to a strong increase of the density of deep traps. Furthermore an abrupt change of the behaviour of the transient photoconductivity between 2 ppm and 3 ppm B2H6 is observed. This change may be interpreted as the transition to a p-type semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 651
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Kunst, M. and Beck, G., J. Appl. Phys. 60, 3558 (1986)Google Scholar
2. LeComber, P. G. and Spear, W. E., in Topics in Applied Physics, Vol.36 (Amorphous Semiconductors, ed. by Brodsky, M. H.), 2nd Edition, p.251, Springer-Verlag, Berlin (1985)Google Scholar