Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-02-05T06:20:04.069Z Has data issue: false hasContentIssue false
  • English
  • Français

Incoherent Light Annealing of Selectively Implanted GaAs for Mesfet Applications

Published online by Cambridge University Press:  25 February 2011

S.A. Kitching ,
M.H. Badawi ,
S.W. Bland  and
J. Mun
S.A. Kitching
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England
M.H. Badawi
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England
S.W. Bland
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England
J. Mun
Affiliation:
Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England
Get access

Abstract

Capped and capless incoherent light annealing of high and low dose silicon implants into GaAs have been compared with conventional capless furnace annealing of the same implants. The yield and uniformity of DC characteristics of selectively implanted depletion mode MESFET's fabricated on 2-inch wafers annealed by the above three methods have also been compared. Capped incoherent light annealing was found to give results comparable to and in some cases better than conventional furnace annealing both in terms of activation of the implants and also device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 503
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Arai, M., Nishiyama, K. and Watanabe, N. 'Radiation annealing of GaAs implanted with Si, Jpn. J. Appl. hys., 1981, 20, pp L124–L126 Google Scholar
[2] Davies, D.E., McNally, P.J., Lorenzo, J.P. and Julian, M. 'Incoherent light annealing of implanted layers in GaAs', IEEE Electron Device Lett., 1982, EDL–3, pp 102–103 Google Scholar
[3] Ito, K., Yoshida, M., Otsubo, M. and Murotani, T. 'Radiation annealing of Si and S-implanted GaAs', Jpn. J. Appl. Phys., 1983, 22, pp L299–L300 Google Scholar
[4] Kohzu, H., Kuzuhara, M. and Takayama, Y. 'Infrared rapid thermal annealing for GaAs device fabrication', J. Appl. Phys., 1983, 54, pp 4998–5003 Google Scholar
[5] Kuzuhara, M., Kohzu, H., Takayama, Y. 'Electrical properties of S implants in GaAs activated by infrared rapid thermal annealing', J. Appl. Phys., 1983, 54, pp 3121–3124 Google Scholar
[6] Tabatabaie-Alavi, K., Masum Choudhury, A.N.M., Fonstad, C.G. and Gelpey, J.C. 'Rapid thermal annealing of Be, Si and Zn implanted GaAs using an ultrahigh power argon arc lamp’, Appl. Phys. Lett., 1983, 43, pp 505–507 Google Scholar
[7] Rosenblatt, D.H., Hitchens, W.R., Shatas, S., Gat, A., Betts, D.A. 'Rapid thermal annealing of Si-implanted GaAs', Mat. Res. Soc. Symp., 1983, Boston, USA Google Scholar
[8] Badawi, M.H., Mun, J. 'Halogen lamp annealing of GaAs for MESFET fabrication', Electronics Letters, 1984, 20, pp 125–126 Google Scholar
[9] Badawi, M.H., Dunbobbin, D.R., Mun, J. 'Selective implantation of GaAs for MESFET applications', Electronic Letters, 1983, 19, pp 598–600 Google Scholar