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In Situ Hrem Observations of Crystallization in LPCVD Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

J. Morgiel ,
I.W. Wu ,
A. Chiang  and
R. Sinclair
J. Morgiel
Affiliation:
Polish Academy of Science, Institute for Metals Research, Krakow, Poland and Stanford University, Stanford, CA 94305
I.W. Wu
Affiliation:
Xerox Palo Alto Research Center, Electronics and Imaging Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304
A. Chiang
Affiliation:
Xerox Palo Alto Research Center, Electronics and Imaging Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

This article describes the application of in situ, high-resolution electron microscopy to the study of crystal nucleation and growth in amorphous silicon. It is shown that dynamic events at elevated temperatures (e.g. 600-750°C) can be recorded at the atomic level by such an approach. It is anticipated that fundamental information, important for the technological development of polysilicon thin films, can be generated by work of this type.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 191
Copyright
Copyright © Materials Research Society 1990

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References

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