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In Situ Characterization of Ain Films Grown on Silicon by MOCVD
Published online by Cambridge University Press: 10 February 2011
Abstract
Films of AIN were grown on Si under vacuum pressure at 900°C and examined ex situ with infrared reflectance spectroscopy and microscopy, scanning electron microscopy, x-ray diffraction and rutherford backscattering spectroscopy. Collection of IR emission spectra for in situ characterization was successful and used to identify growth parameters during film growth.
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- Research Article
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- Copyright © Materials Research Society 1998
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