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Hydrogen in GaN

Published online by Cambridge University Press:  21 February 2011

N. M. Johnson ,
W. Götz ,
J. Neugebauer  and
C. G. Van de walle
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
W. Götz
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
J. Neugebauer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
C. G. Van de walle
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
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Abstract

Hydrogen is implicated in the low doping efficiency of acceptors (e.g., Mg) in MOCVD-grown GaN by the following observations: the well-established role of hydrogen in the same phenomenon in other semiconductors; re-passivation of thermally activated Mg in GaN upon exposure to NH3 or H at temperatures > 400°C; correlation between Mg and H concentrations; and computational studies on the diffusivities of charged H in GaN and on the configuration and stability of the Mg-H complex in GaN. Strong experimental evidence for the Mg-H complex comes from variable-temperature Hall effect measurements which reveal that after hydrogenation of activated GaN:Mg the hole mobility increases as the hole concentration decreases, which is consistent with removal of ionized scattering centers and not with the introduction of separate compensating defects. However, experimental evidence is also accumulating to suggest that the Mg activation process involves the generation or transformation of electrically active defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 723
Copyright
Copyright © Materials Research Society 1996

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References

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