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Hot Wall Epitaxial Growth of Diluted Magnetic Semiconductor Zn1-xMnxSe(111) GaAs(100) Substrate
Published online by Cambridge University Press: 21 February 2011
Abstract
We report the growth of Zn1-xMnxSe films on GaAs(100) by hot wall epitaxy (HWE) up to a Mn concentration of 52%. The crystal structures of Zn1-xMnxSe layers were characterized by x-ray diffraction and Raman scattering. For the first time Zn1-xMnxSe(111) layers on GaAs(100) substrate have been grown and mixed phases of zinc-blende and hexagonal structure have been observed over the range 0.19≤x≤0.52.
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