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High Quality Erbium-Doped Bismuth Based Oxide Film for Planar Waveguide Amplifier Prepared by Sputtering

Published online by Cambridge University Press:  11 February 2011

S. Suzuki ,
Y. Kondo ,
T. Nagashima ,
N. Sugimoto ,
J. Ebisawa  and
S. Ito
S. Suzuki
Affiliation:
Research Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221–8755, Japan
Y. Kondo
Affiliation:
Research Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221–8755, Japan
T. Nagashima
Affiliation:
Research Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221–8755, Japan
N. Sugimoto
Affiliation:
Research Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221–8755, Japan
J. Ebisawa
Affiliation:
Research Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221–8755, Japan
S. Ito
Affiliation:
Research Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221–8755, Japan
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Abstract

High quality Bi2O3 based Er-doped films for planar waveguide amplifier have been deposited by sputtering from sintered targets. It was found that both the amount of residual water and the Er concentration in films mainly affected a lifetime of the fluorescence at 1530nm. By optimizing these parameters, we have obtained films with a lifetime over 3msec, as the same as that of bulk glass prepared by the melting method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 755: Symposium DD – Solid-State Chemistry of Inorganic Materials IV , 2002 , DD7.3
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Sugimoto, N., Kuroiwa, Y., Ochiai, K., Ohara, S., Fukasawa, Y., Ito, S., Tanabe, S., Hanada, T., 11th Optical Amplifiers and their applications (OAA2000), OSA Technical Digest (Optical Society of America, Washington D.C. 2000), PDP3, pp1–3.Google Scholar
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