Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-27T15:54:08.025Z Has data issue: false hasContentIssue false
  • English
  • Français

A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on Simox

Published online by Cambridge University Press:  28 February 2011

P.K. Vasudev ,
K.W. Terrill  and
S. Seymour
P.K. Vasudev
Affiliation:
Hughes Research Laboratories Malibu, California 90265
K.W. Terrill
Affiliation:
Hughes Research Laboratories Malibu, California 90265
S. Seymour
Affiliation:
Hughes Research Laboratories Malibu, California 90265
Get access

Abstract

The use of ultrathin SIMOX wafers for fabricating submicrometer CMOS integrated circuits is described. It is demonstrated from ring oscillator speeds that properly designed devices can exhibit very high transconductance and performance superior to circuits using bulk Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 349
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hashimoto, K., Kamins, T., and Cham, M., IEDM Tech. Digest, p. 672, December 1985.Google Scholar
2 Collinge, J.P., IEEE Electron Device Lett., vol. EDL-7, p. 244 (1986).CrossRefGoogle Scholar
3 Nakashima, S., Maeda, Y., and Akiya, M., IEEE Trans. Electron Devices, vol. ED-33, p. 126 (1986).CrossRefGoogle Scholar