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Growth of GaN on Thin SI {111} Layers Bonded to SI {100} Substrates
Published online by Cambridge University Press: 10 February 2011
Abstract
We have demonstrated the ability to bond thin layers of Si {111} onto either silicon dioxide or silicon nitride coated Si {100}. This was achieved using a “Smart-Cut” process. The integration of SiN required chemical mechanical polishing. The growth of GaN on a thin Si {111} on oxide on Si {100} stack was demonstrated.
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- Copyright © Materials Research Society 1999