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Growth of Epitaxial CoSi2/Si Multilayers

Published online by Cambridge University Press:  26 February 2011

B. D. Runt ,
N. Lewis ,
L. J. Schotalter ,
E. L. Hall  and
L. G. Turner
B. D. Runt
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NT 12301
N. Lewis
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NT 12301
L. J. Schotalter
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NT 12301
E. L. Hall
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NT 12301
L. G. Turner
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NT 12301
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Abstract

Epitaxial CoSi2/Si multilayers have been grown on Si(111) substrates with up to four bilayers of suicide and Si. To our knowledge, these are the first reported epitaxial metal-semiconductor multilayer structures. The growth of these heterostructures is complicated by pinhole formation in the suicide layers and by nonuniform growth of Si over the suicide films, but these problems can be controlled through nse of proper growth techniques. CoSi2 pinhole formation has been significantly reduced by utilizing a novel solid phase epitaxy technique in which room-temperature-deposited Co/Si bilayers are annealed to 600–650δC to form the suicide layers. Islanding in the Si layers is minimized by depositing a thin (<100Å) Si layer at room temperature with subsequent high temperature growth of the remainder of the Si. Cross-sectional transmission electron microscopy studies demonstrate that these growth procedures dramatically improve the continuity and quality of the CoSi. and Si multilayers.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 351
Copyright
Copyright © Materials Research Society 1987

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References

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