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GaN pnp Bipolar Junction Transistors Operated to 250°C

Published online by Cambridge University Press:  15 March 2011

A.P. Zhang ,
G. Dang ,
F. Ren ,
J. Han ,
C. Monier ,
A.G. Baca ,
X.A. Cao ,
H. Cho ,
C.R. Abernathy  and
S.J. Pearton
A.P. Zhang
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
G. Dang
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
C. Monier
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
A.G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
X.A. Cao
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
H. Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
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Abstract

We report on the dc performance of the first GaN pnp bipolar junction transistor. The structure was grown by MOCVD on c-plane sapphire substrates and mesas formed by low damage Inductively Coupled Plasma etching with a Cl2/Ar chemistry. The dc characteristics were measured up to VBC of 65 V in the common base mode and at temperatures up to 250°C. Under all conditions, IC ∼ IE indicated higher emitter injection efficiency. The offset voltage was ≤ 2 V and the devices were operated up to power densities of 13.9 kW·cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T3.2.1
Copyright
Copyright © Materials Research Society 2000

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References

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