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The Formation of Silicon-Rich Silicides

Published online by Cambridge University Press:  25 February 2011

Maria Ronay  and
R.G. Schad
Maria Ronay
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York, 10598
R.G. Schad
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York, 10598
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Abstract

Diffusion studies of mono and bilaycrs of transition-metal films on silicon showed that the formation of η′ —Cu3Si lowers the formation temperature of subsequently forming ReSi2 by 400°C. This is due to the creation of a large amount of silicon self-interstitials accompanying the formation of the copper suicide, which lowers the activation energy for silicon diffusion. The generalization of this result - stating that the formation of all suicides, in which the volume density of silicon is much larger than in elementary silicon injects silicon self-intcrstitials into the silicon lattice - gives new insight into suicide formation, silicide-cnhanccd dopant diffusion and the self-diffusion of silicon itself6.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 573
Copyright
Copyright © Materials Research Society 1990

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