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The Formation and Characterization of Epitaxial Titanium Carbide Contacts to 4H-SiC

Published online by Cambridge University Press:  15 March 2011

S.-K. Lee ,
E. Danielsson ,
C.-M. Zetterling ,
M. Östling ,
J.-P. Palmquist ,
H. Högberg  and
U. Jansson
S.-K. Lee
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, S-164 40, Kista, SWEDEN
E. Danielsson
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, S-164 40, Kista, SWEDEN
C.-M. Zetterling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, S-164 40, Kista, SWEDEN
M. Östling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, S-164 40, Kista, SWEDEN
J.-P. Palmquist
Affiliation:
Uppsala University, Dept. of Inorganic Chemistry, S-751 21, Uppsala, SWEDEN
H. Högberg
Affiliation:
Uppsala University, Dept. of Inorganic Chemistry, S-751 21, Uppsala, SWEDEN
U. Jansson
Affiliation:
Uppsala University, Dept. of Inorganic Chemistry, S-751 21, Uppsala, SWEDEN
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Abstract

Epitaxial TiC Ohmic and Schottky contacts to 4H-SiC were formed by a new deposition method, UHV co-evaporation with Ti and C60, at low temperature (< 500°C). We achieved a contact resistivity of 2 × 10−5Δcm2 at 25°C for as deposited Ohmic contacts on Al ion implanted 4H-Silicon carbide. The rectifying behavior of TiC Schottky contacts was also investigated using I-V and C-V. The measured Schottky barrier height (SBH) was 1.26 eV for n-type and 1.65 eV for p-type 4H-SiC using C-V measurements for frequencies ranging from 1kHz to 1MHz. LEED, RBS, XPS, and XRD measurements were performed to analyze composition ratio, interface reaction, and structural properties of the TiC epitaxial layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.9.1
Copyright
Copyright © Materials Research Society 2000

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References

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