Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-03T02:20:14.224Z Has data issue: false hasContentIssue false
  • English
  • Français

Film Growth Mechanisms of Amorphous Silicon in Diode and Triode Glow Discharge Systems

Published online by Cambridge University Press:  26 February 2011

C. C. Tsai ,
J. G. Shaw ,
B. WACKER  and
J. C. Knights
C. C. Tsai
Affiliation:
Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304.
J. G. Shaw
Affiliation:
Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304.
B. WACKER
Affiliation:
Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304.
J. C. Knights
Affiliation:
Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304.
Get access

Abstract

By simulating the growth morphology of plasma-deposited amorphous silicon films on patterned substrates using a Monte-Carlo technique, we find the effective sticking coefficient for the dominating mass transporting species to be quite different depending on the film growth mechanism. The physical-vapor-deposition-like growth regime producing defective materials is associated with species like SiH2 and SiH which have a large effective sticking coefficient, while the chemical-vapor-deposition-like process producing “device quality” materials is linked to species like SiH3 which has a much smaller effective sticking coefficient. In a triode reactor the physical-vapor-deposition-like process is suppressed since species with small effective sticking coefficients are selected. However, the growth rate decreases rapidly as the substrates are moved away from the plasma. There seems to be an incompatibility between good material quality and fast growth rate in the plasma deposition of amorphous silicon in either diode or triode reactors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 219
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Spear, W. E. and LeComber, P. G., Solid State Commun. 17, 1193 (1975).Google Scholar
2. Tsai, C. C., Knights, J. C., Chang, G. and Wacker, B., J. Appl. Phys. 59, 2998 (1986).Google Scholar
3. Matsuda, A., Kaga, T., Tanaka, H. and Tanaka, K., J. Non-cryst. Solids 59 & 60, 687 (1983).Google Scholar
4. Street, R. A., Knights, J. C. and Biegelsen, D. K., Phys. Rev. B 18, 1880 (1978).Google Scholar
5. Knights, J. C. and Lujan, R. A., Appl. Phys. Lett. 35, 244 (1979).Google Scholar
6. Shaw, J. G. and Tsai, C. C., to be published.Google Scholar
7. Gallagher, A. and Scott, J., Final Report (Apr. 15, 1984 - Apr. 14, 1985), contract DB-4-04078-1, University of Colorado, Boulder, CO 80309; R. M. Robertson, doctoral thesis, University of Colorado, Boulder (1985).Google Scholar
8. Longeway, P. A., Estes, R. D. and Weakliem, H. A., J. Phys. Chem. 88, 73 (1984).Google Scholar
9. Kampas, F. J., in “Preparation & Structure of Hydrogenated Amorphous Silicon”, ed. Pankove, J., Academic Press, New York (1984) pp.153.Google Scholar
10. Van den Brekel, C. H. J. and Jansen, A. K., J. Crystal Growth 43, 488 (1978).Google Scholar