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Fast Scanned Energy Beam Induced Explosive Crystallization of Ion Implantation Amorphized Poly and Single Crystal Silicon Substrates

Published online by Cambridge University Press:  15 February 2011

M. Lerme ,
T. Ternisien D'ouville ,
Duy-Phach Vu ,
A. Perio ,
G.A. Rozgonyi  and
V. T. Nguyen
M. Lerme
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
T. Ternisien D'ouville
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
Duy-Phach Vu
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
A. Perio
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
G.A. Rozgonyi
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
V. T. Nguyen
Affiliation:
CNET BP.42, 38240 MEYLAN, FRANCE
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Abstract

Explosive crystallisation induced by an electron beam and by a CW Ar+ laser operating in fast scanning mode is observed for the first time on amorphized silicon layers created by implantation on either polycrystalline films deposited on Si02 or single crystal silicon substrates. The grain structure in the explosive crescents is studied by preferential chemical etching in conjunction with Nomarski optical microscopy, SEM and TEM. The results are similar to the so-called solid-phase explosive crystallization previously observed in a-Si films deposited on glass substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 547
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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