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Failure in Tungsten-Filled Via Structures

Published online by Cambridge University Press:  15 February 2011

J. J. Clement ,
J. R. Lloyd  and
C. V. Thompson
J. J. Clement
Affiliation:
Digital Equipment Corp., 77 Reed Road, Hudson, MA 01749
J. R. Lloyd
Affiliation:
Digital Equipment Corp., 77 Reed Road, Hudson, MA 01749
C. V. Thompson
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Failure of the tungsten-filled via interconnect structure is modelled. Two mechanisms contributing to void growth are considered: relief of stress due to differential thermal expansion, and electromigration. A self-limiting void volume is predicted, resulting in a self-limiting resistance increase which is a function of structure geometry and the void morphology. The relative contributions of the two mechanisms change significantly as the temperature and current density are reduced from accelerated test conditions, affecting the extrapolation of test results to service conditions. Modified procedures for extrapolating lifetimes are discussed, as well as suggested process changes to improve reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 423
Copyright
Copyright © Materials Research Society 1995

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