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Fabrication and Optical Properties of Green emission semipolar {101̅1} InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays

Published online by Cambridge University Press:  01 July 2011

Shih-Pang Chang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Jet-Rung Chang
Affiliation:
Department of Electronic Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Ji-Kai Huang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Jinchai Li
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan Department of Physics, Xiamen University, Xiamen 361005, China
Yi-Chen Chen
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Kuok-Pan Sou
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Yun-Jing Li
Affiliation:
Institute of Lighting and Energy Photonics, National Chiao Tung University at Tainan, Taiwan
Hung-Chih Yang
Affiliation:
R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Ta-Cheng Hsu
Affiliation:
R&D Division, Epistar Co. Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan
Tien-Chang Lu
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Hao-Chung Kuo
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao TungUniversity, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
Chun-Yen Chang
Affiliation:
Department of Electronic Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan
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Abstract

We report that the high crystalline and high efficiency green emission semipolar {101̅1} InGaN/GaN multiple quantum wells (MQWs) grown on the {101̅1} facets of GaN nanopyramid arrays by selective area epitaxy. Clear and sharp interfaces of the semipolar {101̅1} InGaN/GaN MQWs was observed by transmission electron microscopy images. As comparing with (0001) MQWs, the internal electric field of {101̅1} MQWs was remarkably reduced from 1.7 MV/cm to 0.5 MV/cm, and the room temperature (RT) internal quantum efficiency (IQE) at green emission was enhanced by about 80%. This greatly enhancement of IQE is due to suppress the polarization effect in the {101̅1} MQWs which shorten the radiative recombination to compete with nonradiative recombination at RT. These results evince that the {101̅1} planes are promising for solving the efficiency green gap of III-nitride light emitters.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

[1] Walukiewicz, J.W.W, Yu, K., Ager, J., Haller, E., Lu, H., and Schaff, H., Appl. Phys. Lett. 80, 4741 (2002).Google Scholar
[2] Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., and Bedair, S. M., Appl. Phys. Lett. 90, 151109 (2007).Google Scholar
[3] Masui, H., Nakamura, S., DenBaars, S. P., and Mishra, U. K., IEEE Trans Electron Devices vol. 57, pp. 88, 2010.Google Scholar
[4] Lee, Y. J., Lin, S. Y., Chiu, C. H., Lu, T.C, Kuo, H. C., Wang, S. C., Chhajed, S., Kim, J. K., and Schurbert, E. F., Appl. Phys. Lett. 94, 141111 (2009).Google Scholar
[5] Lin, H.W., Lu, Y.J., Chen, H.Y., Lee, H.M., and Gwo, S.J., Appl. Phys. Lett. 97, 073101 (2010).Google Scholar
[6] Sekiguchi, H., Kishino, K., and Kikuchi, A., Appl. Phys. Lett. 96, 231104 (2010).Google Scholar
[7] Chen, G. T., Chang, S. P., Chyi, J. I. and CHang, M. N., Appl. Phys. Lett. 92, 241904 (2008).Google Scholar
[8] Hiramatsu, K., Nishiyama, K., Onishi, M., Mizutani, H., Motogaito, A., Miyake, H., Iyechika, Y., Maeda, T., J. Crystal Growth 221, 316 (2000).Google Scholar
[9] Lee, Y. J., Chiu, C. H., Ke, C. C., Lin, P. C., Lu, T. C., Kuo, H. C., and Wang, S. C., IEEE J Sel. Top. Quantum Electron vol. 15, No. 4, pp. 11371143 (2009).Google Scholar
[10] Chtanov, A., Baars, T., and Gal, M., Phys. Rev. B 53, 4704 (1996)Google Scholar
[11] Sasaki, A., Shibakawa, S. I., Kawakami, Y., Nishizuka, K., Narukawa, Y., and Mukai, T, Jpn. J. Appl. Phys. 45, 8719 (2006).Google Scholar