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Experimental Study of Precipitation Processes in Oxygen Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

R. Weber ,
R. Yankov ,
R. Müller ,
W. Skorupa ,
S. Reiss  and
K.-H. Heinig
R. Weber
Affiliation:
Institute of Ion Beam Physics and Materials Research, Research Centre Rossendorf, P.O.Box 510119, 01314 Dresden, Germany
R. Yankov
Affiliation:
On leave from: Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Shose, 1784 Sofia, Bulgaria
R. Müller
Affiliation:
Central Analytics Group, Research Centre Rossendorf, P.O.Box 510119, 01314 Dresden, Germany
W. Skorupa
Affiliation:
Institute of Ion Beam Physics and Materials Research, Research Centre Rossendorf, P.O.Box 510119, 01314 Dresden, Germany
S. Reiss
Affiliation:
Institute of Ion Beam Physics and Materials Research, Research Centre Rossendorf, P.O.Box 510119, 01314 Dresden, Germany
K.-H. Heinig
Affiliation:
Institute of Ion Beam Physics and Materials Research, Research Centre Rossendorf, P.O.Box 510119, 01314 Dresden, Germany
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Abstract

Single crystal (100) silicon substrates were implanted at 300 keV with substoichiometric oxygen doses ranging from 1 × 1016 to 1 × 1017 cm-2. Samples were annealed for 2 hours over the temperature range from 1100°C to 1250°C and were subsequently analysed by both cross sectional transmission electron microscopy (XTEM) and scanning electron microscopy (SEM). The nucleation and growth of oxide precipitates within the implanted layer was followed during annealing. The emphasis was placed upon studying the process of Ostwald ripening which is known to play an important role in the formation of the incipient buried layer. Besides, a clear trend of the SiO2 precipitates to arrange in well defined regions was revealed and this was attributed, as distinct from the earlier claims, to an inherent process of self organisation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 729
Copyright
Copyright © Materials Research Society 1994

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References

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