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Enhancement of Flux Pinning Force by Ion Beam Irradiation of Epitaxial Ba2Cu3O7-δ Films

Published online by Cambridge University Press:  26 February 2011

M. P. Siegal ,
Julia M. Phillips ,
R. B. van Dover ,
E. M. Gyorgy ,
A. E. White  and
J. H. Marshall
M. P. Siegal
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. B. van Dover
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
E. M. Gyorgy
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
A. E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. H. Marshall
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Epitaxial Ba2YCu3O7-δ (BYCO) films grown by the ex situ BaF2 process are comparable to single crystals both in crystalline integrity (RBS/ion channeling χmin < 3%) and the value and temperature dependence of the critical current (Jc) in an applied magnetic field in the BYCO (001) direction of Ha = 0.9T. With the appropriate dose of either 2 MeV H+ or 135Xe+, we are able to enhance Jc by a factor of 2 in H = 0.9T with little effect on Tc. The ability to change Jc by such a large factor in these films is a prerequisite for isolation and study of the induced defects and study their properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 293
Copyright
Copyright © Materials Research Society 1992

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