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Energy Storage And Recovery In Thin Metal Films On Substrates

Published online by Cambridge University Press:  10 February 2011

Shefford P Baker ,
Rose-Marie Keller  and
Eduard Arzt
Shefford P Baker
Affiliation:
Max-Planck-Institut ffir Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
Rose-Marie Keller
Affiliation:
Max-Planck-Institut ffir Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
Eduard Arzt
Affiliation:
Max-Planck-Institut ffir Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
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Abstract

Dislocation segments which extend through the thickness of a film can move through the film only if dislocation line length is deposited or removed at the film/substrate and film/passivation (if any) interfaces. The dislocation density and, therefore, the energy stored in the film increase during plastic deformation. The reverse process, that is, the reduction of strain energy in the film by the reduction of dislocation line length, is here suggested to be the origin of a number of unexplained features of experimentally obtained stress-temperature curves, including very low (or even “negative”) yield stresses in compression, tensile-compressive flow stress asymmetries, increasing strength with increasing temperature upon heating, and a very strong Bauschinger-like effect which has been seen in thin Cu films. The results of stress-temperature measurements of passivated Cu thin films on silicon substrates are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 605
Copyright
Copyright © Materials Research Society 1998

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References

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