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Electronic properties of CeOs4Sb12

Published online by Cambridge University Press:  01 February 2011

Donald Galvan
Donald Galvan*
Affiliation:
[email protected], Centro de Ciencias de la Materia Condensada-UNAM, Fisicoquimica de Superficies, Carr. Tijuana-Ensenada, Km. 107, Ensenada, Baja California Norte, 22800, United States, (646)1-74-46-02, (646)1-74-46-03
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Abstract

CeOs4Sb12 is a very interesting material due to the diversity of physical properties which could be dedicated to industrial applications. With this goal in mind, electronic structural calculations were performed in order to provide information regarding its properties. The energy bands yielded information regarding its semiconductor behavior as well as a mini gap of the order of 0.45 eV between the valence and conduction bands. Moreover, total and projected density of states yielded information of a possible hybridization between Ce f-, Os d- and p-, with Sb p-orbitals. Hence, this compound could be considered a likely candidate as a thermoelectic material

Keywords

electronic structurethermoelectricitysemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F08-08
Copyright
Copyright © Materials Research Society 2006

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References

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