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Electrically-controlled Resistance Switching Accompanied by Ultra-high-J Domains of VO2 Films

Published online by Cambridge University Press:  31 January 2011

Joe Sakai
Joe Sakai*
Affiliation:
[email protected], Univ. F. Rabelais, Laboratoire LEMA, Parc de Grandmont, Tours, 37200, France
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Abstract

The electric-field-induced resistance switching (EIRS) phenomenon on a VO2 planar-type junction fabricated on a Al2O3 (0001) substrate was studied by performing current-voltage (I-V) measurement and optical microscope observation simultaneously. It was confirmed that current density J of the low-resistance-state (LRS) region is maintained constant at approximately 1.6 × 106 A/cm2, while the volume of the LRS region was changed according to the current. A survey of the previous I-V traces on EIRS of VO2 revealed that almost all the junctions so far had shown non-zero V-intercepts, which are attributed to the volume change of the LRS regions. The maintenance of high-J in the LRS region is considered to be related to the electrically-induced metallic phase mechanism reported in perovskite-type manganites.

Keywords

Vmetal-insulator transitionoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H11-13
Copyright
Copyright © Materials Research Society 2009

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