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Electrical Properties of Nanoscale Tisi2 Islands on Si

Published online by Cambridge University Press:  10 February 2011

Jaehwan Oh ,
Hoon Ham ,
Peter Laloli  and
R. J. Nemanich
Jaehwan Oh
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
Hoon Ham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695
Peter Laloli
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695
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Abstract

Nanoscale TiSi2 islands are formed by electon beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800–1000°C). The typical island sizes were ˜10 nm. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 111
Copyright
Copyright © Materials Research Society 2000

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References

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