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Effects of TCO/a-Si:C:H Interface Defect States on p-i-n a-Si:H Solar Cell Performance

Published online by Cambridge University Press:  16 February 2011

Franc Smole  and
Marko Topič
Franc Smole
Affiliation:
University of Ljubljana, Faculty of Electrical and Computer Engineering, Tržaška 25, 61000 Ljubljana, Slovenia
Marko Topič
Affiliation:
University of Ljubljana, Faculty of Electrical and Computer Engineering, Tržaška 25, 61000 Ljubljana, Slovenia
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Abstract

To explain realistic circumstances with regard to energy band profiles at the TCO/a-Si:C:H heterojunction, the ASPIN computer simulation has been used. Numerical calculations indicate that the increased interface defect densities result in a steep potential drop inside the interface region, while the rest of the work function difference extends into the p-layer. The detrimental effect of a-Si:C:H partial oxidation has been simulated by additionally increased density of states at a-Si:C:H surface, and its influence on the potential barrier has been analyzed. The impact of both TCO/a-Si:C:H interface states and a-Si:C:H surface states on the photoelectric properties of p-i-n a-Si:H solar cell is discussed, and a possible improvement of Voc is envisaged.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 735
Copyright
Copyright © Materials Research Society 1994

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References

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