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The Effects of Small Concentrations of Oxygen in RTP Annealing of Low Energy Boron, BF2 and Arsenic Ion Implants

Published online by Cambridge University Press:  10 February 2011

Daniel F. Downey ,
Judy W. Chow ,
Wilfried Lerch ,
Juergen Niess  and
Steven D. Marcus
Daniel F. Downey
Affiliation:
Varian Ion Implant Systems, Gloucester, Ma. 01930
Judy W. Chow
Affiliation:
Varian Ion Implant Systems, Gloucester, Ma. 01930
Wilfried Lerch
Affiliation:
STEAG AST Elektronik GmbH Dornstadt, Germany
Juergen Niess
Affiliation:
STEAG AST Elektronik GmbH Dornstadt, Germany
Steven D. Marcus
Affiliation:
STEAG AST Elektronik USA, Tempe, Az.
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Abstract

Ion implants of 1.0 keV 11B+, 5 keV BF 2 +, and 2.0 keV As+ at a dose of IeI5/cm2 were rapid thermal annealed (RTA) in a STEAG AST-2800µ with varying percents of oxygen in N2, ranging from 0-lppm to 50,000 ppm to investigate the effects of low concentrations of oxygen during anneal. Sheet resistance (Rs), ellipsometry, SIMS, Tapered Groove Profilometry (TGP), and Scanning Force Microscopy (SFM) were employed to characterize these layers. For each of these implant cases, an optimal RTA condition is established which maximizes retained dose while still producing shallow junctions. As a function of O2 content, anneal temperature and implant condition, three regimes are observed that affect after anneal retained dose. These regimes are: dopant loss to the ambient resulting from etching of Si, dopant loss by out-diffusion from evaporation/chemical reactions, a capping regime that minimizes out-diffusion. In this later regime the dopant loss results from consumption into the RTA grown oxide. In addition, this paper also discusses oxidation enhanced diffusion (OED) and identifies its extent as a function of temperature and O2 content of the anneal for the three implant conditions investigated. For example, a 1.0 keV 11B+wafer annealed at 1050°C lOs in a controlled 33 ppm of O2 in N2 yields a SIMS junction depth 320 Å shallower than previously reported by others.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 263
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Downey, D.F., Osburn, C.M., Marcus, S.; Solid State Technology, p.71, Dec. 1997 Google Scholar
2. Osburn, C.M., Downey, D.F., Felch, S.B., Lee, B. S., Proc. 11 th Intl. Conf. on Ion Implantation Technology, p. 607 (1997).Google Scholar
3. Felch, S.B., Lee, B.S., Downey, D.F., Zhao, Z., Eddy, R., Proc. 11 th Intl. Conf. on Ion Implantation Technology, p. 611 (1997).Google Scholar
4. Daryanani, S.L., Downey, D.F., Cummings, J.J., Meloni, M., McKenna, C., Nenyei, Z., European Semiconductor, p. 19, (April 1997).Google Scholar
5. Downey, D.F., Daryanani, S.L., Meloni, M., Brown, K., Felch, S.B., Lee, B.S., Marcus, S., Gelpey, J., Presented at the Materials Research Society Symposium, Rapid Thermal and Integrated Processing Session (April 1997).Google Scholar
6. Harrington, W., Magee, C., Pawlik, M., Downey, D.F., Osburn, C.M., Felch, S.B., Proc. Fourth Intl. Workshop on Ultrashallow Junctions, p.7.1 (April 1997).Google Scholar
7. Magee, C., Shallenberger, J., Denker, M., Downey, D.F., Meloni, M., Cloherty, S., Felch, S.B., Lee, B.S., Proc. Fourth Intl. Workshop on Ultrashallow Junctions, p.8.1 (April 1997).Google Scholar
8. Downey, D.F., Osburn, C.M., Cummings, J., Daryanani, S.L., Falk, S., Thin Solid Films 308–309 (1997) 562–569.Google Scholar
9. Marcus, S., Downey, D.F., Daryanani, S.L., Chow, J., Proc. of 5th Int. Conf. On Advanced Thermal Processing-RTP'97, p 64–71, Sept. 1997.Google Scholar
10. Todorov, S., Downey, D.F., Daryanani, S.L., Chow, J., Meloni, M., Marcus, S., Proc. of 5th Int. Conf. on Advanced Thermal Processing-RTP'97, p 77–84, Sept. 1997.Google Scholar
11. Downey, D.F., Marcus, S.D. and Chow, J.W, “Optimization of RTP Parameters to Produce Ultra-shallow, Highly Activated B+, BF 2 +; and As+; Ion Implanted Junctions”, presented at the TMS conference Feb. 1998, to be published in J. of El. Mat., June/July 1998.Google Scholar
12. Downey, D. F.; US patent pending application, “Methods for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing”, 1998.Google Scholar
13. Marcus, S.D., Lerch, W., Downey, D.F., Todorov, S. and Chow, J.W., “RTP Requirements to Yield Uniform and Repeatable Ultra-shallow Junctions with Low Energy Boron and BF2 Ion Implants”, presented at the TMS conference Feb. 1998, to be published in J. of El. Mat., June/July 1998.Google Scholar
14.. Prussin, S., Bil, C.A., Downey, D.F., Meloni, M., Osbum, C.M., “Characterization of Ultrashallow Junctions with Tapered Groove Profilometry and Other Techniques”, presented at NIST, 1998 Int. Conf on Char. & Metr. for ULSI Tech., March, 1998, to be published in those Proceedings.Google Scholar
15. Agarwal, A., Eaglesham, D.J., Gossman, H.J., Pelaz, L., Herner, S.B., Jacobson, D.C., Haynes, T.E., Erokhin, Y., Simonton, R.; Proc. of IEDM'97, p. 467, 1997.Google Scholar
16. Schmitz, B., Kreiser, U., Wallmueller, S., Lerch, W., Goch, G., XIV IMEKO World Conf., Grunwald Vol. VIII, Topic 14, Ed. Jouko Halttunen, 178–183 Google Scholar
17. Nenyei, Z., Wein, G., Lerch, W., Grunwald, C., Gelpey, J., Wallmueller, S., 5th Int. RTP Conf., RTP'97 P. 35–43, 1997.Google Scholar
18. Lerch, W., Glueck, M., Stolwijk, N.A., Marcus, S.D., Downey, D.F., Chow, J. W., Schaefer, M., Marquardt, H.; “Simulation of Rapid Thermal Annealed Ultra-shallow Junction Formation of Boron in Inert and Oxidizing Ambients”, presented at MRS Spring Meeting 1998, to be published in the RTP Proceedings.Google Scholar