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Effects of Ion Implantation and Temperature on Radiation-Induced Segregation In Ni-9Al Alloys

Published online by Cambridge University Press:  15 February 2011

M. J. Giacobbe ,
N. Q. Lam ,
P. R. Okamoto ,
N. J. Zaluzec  and
J. F. Stubbins
M. J. Giacobbe
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439 University of Illinois at Urbana-Champaign, Dept. of Nuclear Engineering, Urbana, IL 61801
N. Q. Lam
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
P. R. Okamoto
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
N. J. Zaluzec
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
J. F. Stubbins
Affiliation:
University of Illinois at Urbana-Champaign, Dept. of Nuclear Engineering, Urbana, IL 61801
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Abstract

The effects of Ne and Sc implantation on radiation-induced segregation (RIS) in Ni- 9at.%Al were studied in-situ utilizing the high-voltage electron microscopeffandem accelerator facility at Argonne National Laboratory. A highly-focused 900-keV electron beam generated radial defect fluxes which, in turn, induced the transport of Al atoms toward the center of the electronirradiated area via the inverse-Kirkendall effect. The radial segregation rate of Al atoms was monitored by measuring the diameter of the γ′-Ni3Al zone which formed in the Al-enriched area during irradiation. Ne and Sc implantation effects on RIS were investigated at 550°C, while Ne effects were also examined at 625°C to determine the influence of temperature on the ability of Ne to act as defect trapping sites, causing RIS suppression. It was found that the RIS suppression effect of Ne increased with increasing irradiation temperature, and that Sc had a small RIS suppression effect which increased with increasing Sc implantation dose. Ne bubbles which formed during implantation are believed to be responsible for its strong suppression effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 551
Copyright
Copyright © Materials Research Society 1997

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