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The Effects of Deposition Parameters on the Properties of SiO2 Films Deposited by Microwave Ecr Plasmas

Published online by Cambridge University Press:  22 February 2011

T. T. Chau ,
P. M. Lam  and
K. C. Kao
T. T. Chau
Affiliation:
Electrical and Computer Engineering, University of Manitoba, 15 Gillson Street, Winnipeg, Manitoba, Canada, R3T 5V6
P. M. Lam
Affiliation:
Electrical and Computer Engineering, University of Manitoba, 15 Gillson Street, Winnipeg, Manitoba, Canada, R3T 5V6
K. C. Kao
Affiliation:
Electrical and Computer Engineering, University of Manitoba, 15 Gillson Street, Winnipeg, Manitoba, Canada, R3T 5V6
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Abstract

Electronic and physical properties of SiO2 films deposited by microwave ECR plasmas of the mixtures of SiH4 and N2O have been measured as functions of the pressure and the gas-flow ratio of N2O to SiH4 gases in the processing chamber. Experimental results show that the film deposition rate increases with increasing SiH4 concentration, that is, with decreasing gas-flow ratio. The films deposited at N2O/SiH4 gas-flow ratios smaller than 10 tend to have a refractive index higher than the thermally grown oxide. However, for the N2O/SiH4 gas-flow ratios between 10 and 20, the films have the refractive index close to that of thermally grown oxide, which is about 1.45-1.46. The film deposition rate increases linearly with increasing pressure. In general, the films deposited at high pressures (>100 mTorr) have a higher refractive index as compared with the thermally grown oxide; also films deposited at high pressures have more electron traps. Good quality SiO2 films can be deposited at pressures with the range of 20 -50 mTorr and the N2O/SiH4 gas-flow ratio of 10.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 373
Copyright
Copyright © Materials Research Society 1994

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