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Effects of Confinement on Plastic Deformation in Passivated AL Films

Published online by Cambridge University Press:  15 February 2011

S.G.H. Anderson ,
I.-S. Yeo ,
P.S. Ho ,
S. Ramaswami  and
R. Cheung
S.G.H. Anderson
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
I.-S. Yeo
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
P.S. Ho
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
S. Ramaswami
Affiliation:
Advanced Micro Devices, 901 Thompson Place, P.O. Box 3453, Sunnyvale, CA 94088-3000
R. Cheung
Affiliation:
Advanced Micro Devices, 901 Thompson Place, P.O. Box 3453, Sunnyvale, CA 94088-3000
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Abstract

Wafer curvature measurements of a trilayer (SiO2 / AlSiCu / Si) structure are compared to that predicted by a weighted sum of individual measurements of SiO2 and AlSiCu films on Si, and significant differences are found to exist for temperatures above 200°C. A straightforward analysis of the stresses in each layer has been modeled using an extension of a model by Feng et al. which assumes uniform plastic deformation throughout the Al. The modeling results suggest a straightforeward method for determining stresses in deformable thin films that are confined by elastic overlayers. A comparison of the stress-temperature behavior for unpassivated and passivated AlSiCu films reveals that the confined films exhibit less plastic deformation and both higher tension and compression during thermal cycling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 329
Copyright
Copyright © Materials Research Society 1993

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References

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