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The Effect of the Passivation Material on the Stress and Stress Relaxation Behavior of Narrow Al-Si-Cu Lines

Published online by Cambridge University Press:  15 February 2011

A. Witvrouw ,
P. Flinn  and
K. Maex
A. Witvrouw
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
P. Flinn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA, U.S.A.
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

800 nm thick and 1 jim wide Al-lwt.%Si-0.5wt.% Cu parallel lines with I μm spacing were passivated with PECVD oxide, oxynitride or nitride. Substrate curvature measurements as a function of temperature and XRD-measurements at room temperature were used to characterize macroscopic samples of these parallel Al-Si-Cu-lines. By using both techniques the average inplane stresses for the Al-Si-Cu lines as well as for the covering passivation material can be determined as a function of temperature. The highest and lowest stresses in the Al-Si-Cu are observed for lines with nitride and oxide passivations, respectively. Also the number of voids in the lines after a storage test at 250 °C is clearly highest for a nitride passivation and lowest for an oxide passivation.

The stress in the passivation itself and its temperature dependence is found to be very different from the stress in a blanket passivation film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 519
Copyright
Copyright © Materials Research Society 1996

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