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The Effect of Si Additions on the Epitaxial Growth of Gel−x Cx Alloys on Si(100)

Published online by Cambridge University Press:  15 February 2011

Bi-Ke Yang ,
J. D. Weil  and
M. Krishnamurthy
Bi-Ke Yang
Affiliation:
Department of Metallurgical and Materials Engineering, Michigan Technological University, Houghton, MI, 49931
J. D. Weil
Affiliation:
Department of Metallurgical and Materials Engineering, Michigan Technological University, Houghton, MI, 49931
M. Krishnamurthy
Affiliation:
Department of Metallurgical and Materials Engineering, Michigan Technological University, Houghton, MI, 49931
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Abstract

We report on the differences in the epitaxial growth mechanisms between Ge1−xCx (O<x<0.1) and Ge1−x−ySixCy (x=0.2, 0<y<0.05) alloys grown on Si(100) using low temperature( 200°C) molecular beam epitaxy. Thin films (50˜65nm) were characterized in situ by RHEED and ex situ by transmission electron microscopy and x-ray diffraction. With increasing C concentration, the microstructure of both Ge and GeSi alloys changes from 2D layer growth to 3D islanding. The d400 spacing of the relaxed alloys decreases marginally, with a maximum of 1at.% C being substitutionally incorporated. Ge-C films with higher C content have a high density of planar defects, typically twins and stacking faults. The addition of 20% Si does not appear to increase the amount of substitutional C in the films. Rather, the additions of 20% Si to Ge-C alloys somehow seems to enhance the tendency for the formation of planar defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 371
Copyright
Copyright © Materials Research Society 1997

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