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Effect of High Temperature Annealing on the Thermoelectric Properties of GaP Doped SiGe

Published online by Cambridge University Press:  25 February 2011

Jan W. Vandersande ,
Charles Wood  and
Susan Draper
Jan W. Vandersande
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA
Charles Wood
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA
Susan Draper
Affiliation:
NASA-Lewis Research Center, Cleveland, Ohio
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Abstract

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300°C - 1000°C. The conversion efficiency depends on Z - S2/ρΛ, a material's parameter (the figure of merit), where S is the Seebeck coefficient, ρ is the electrical resistivity and Λ is the thermal conductivity. The annealing of several samples in the temperature range of 1100°C - 1300°C resulted in the power factor P (=S2/ρ) increasing with increased annealing temperature. This increase in P was due to a decrease in ρ which was not completely offset by a drop in S2 suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ca- P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the Power factor of annealed GaP doped SiGe are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 347
Copyright
Copyright © Materials Research Society 1987

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References

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