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Dual Ion Beam Sputter Deposition of Cdte, Hgte and Hgcdte Films

Published online by Cambridge University Press:  25 February 2011

S. V. Krishnaswamy ,
J. H. Rieger ,
N. J. Doyle  and
M. H. Francombe
S. V. Krishnaswamy
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
J. H. Rieger
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
N. J. Doyle
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
M. H. Francombe
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
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Abstract

Experiments have been performed to assess the feasibility of using ionbeam sputter deposition for the growth of CdTe, HgTe and HgCdTe films. Some simple cryogenically cooled dual-target configurations have been employed in an investigation of epitaxial growth on CdTe substrates. Good-quality epitaxy was achieved for CdTe at temperatures down to 140°C, and for HgTe and HgCdTe at temperatures extending to below 50° C.Based upon compositional and phase analyses, and upon IR absorption measurements, we conclude that, using an excess Hg flux, stoichiometric transfer of the HgCdTe target composition to the substrate is approximately obtained. However, some departure from stoichiometry is produced at higher substrate temperatures (> 150”C) due to thermal re-evaporation of Hg, and under high sputtered Hg fluxes due to selective re-sputtering of HgTe. The good structural quality and excellent compositional uniformity of the films indicate that ion-beam sputter deposition may be suitable for low-temperature processing of IR detector structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 463
Copyright
Copyright © Materials Research Society 1987

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References

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