Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-05T07:03:29.812Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct a-Si:H Photo-CVD Deposition with the Excimer Spectra of a Dielectric-Barrier Discharge Lamp

Published online by Cambridge University Press:  25 February 2011

F. Kessler ,
H.-D. Mohring  and
G.H. Bauer
F. Kessler
Affiliation:
Inst. f. Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwald-ring 47, D-7000 Stuttgart 80, F.R. Germany
H.-D. Mohring
Affiliation:
Inst. f. Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwald-ring 47, D-7000 Stuttgart 80, F.R. Germany
G.H. Bauer
Affiliation:
Inst. f. Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwald-ring 47, D-7000 Stuttgart 80, F.R. Germany
Get access

Abstract

A vacuum UV-photo-CVD reactor for direct decomposition of Si2H6, SiH4, GeH4, and B2H6 for a-Si:H, a-Ge:H, and a-SiGe:H deposition has been operated with a large area dielectric-barrier discharge lamp emitting excimer radiation of Xe (7.3eV), Kr (8.6eV), or Ar (9.8eV).

It is shown that the deposition process (Si2H6 or GeH4 at 0.5 mbar) is governed by the diffusion of long-lifetime radicals.

High quality undoped and p-type doped a-Si:H has been deposited from Si2H6 and B2H6 with the Xe lamp spectrum (σph/σ≈106 at Eg=1.9eV) and film growth rates of up to 5 nm/min have been achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 559
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Saitoh, T., Muramatsu, S., Shimada, T., Migitaka, M., Appl. Phys. Lett. 42(8), 678 (1983).Google Scholar
2. Langford, A.A., Stafford, B.L., Tsuo, Y.S., Proc. 19 IEEE PVSC, New Orleans, 573 (1987).Google Scholar
3. Rocheleau, R.E., Jackson, S.C., Hegedus, S.S., Baron, B.N., MRS Symp. Proc. Vol. 70, 37 (1986).Google Scholar
4. Mishima, Y., Hirose, M., Osaka, Y., Nagamine, K., Ashida, Y., Kitagawa, N., Isogaya, K., Jap. J. Appl. Phys. 22, L 46 (1983).Google Scholar
5. Dietrich, T.R., Chiussi, S., Stafast, H., Comes, F.J., Appl. Phys. A 48, 405 (1989).Google Scholar
6. Zarnani, H., Demiryont, H., Collins, G.J., J. Appl. Phys. 60(7), 2523 (1986).Google Scholar
7. Yoshikawa, A., Yamaga, S., Jap. J. Appl. Phys. 23, L91 (1984).Google Scholar
8. Robertson, P.A., Milne, W.I., MRS Symp. Proc. Vol. 70, 31 (1986).Google Scholar
9. Meunier, M., Gattuso, T.R., Adler, D., Haggerty, J.S., Appl. Phys. Lett. 43(3), 273 (1983).Google Scholar
10. Eliasson, B., Kogelschatz, U., Appl. Phys. B 46, 299 (1988).Google Scholar
11. Gallagher, A., J. Appl. Phys. 60(4), 1369 (1986).Google Scholar