Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-24T16:43:32.846Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors

Published online by Cambridge University Press:  01 February 2011

Stephen J. Pearton ,
L C Tien ,
H S Kim ,
D P Norton ,
J J Chen ,
H T Wang ,
B S Kang ,
F Ren ,
W T Lim  and
J Wright
...Show all authors
Stephen J. Pearton
Affiliation:
[email protected], University of Florida, Materials Science and Engineering, PO Box 116400,100 Rhines Hall, Gainesville, FL, 32611, United States
L C Tien
Affiliation:
[email protected], University of Florida, MSE, Gainesville, FL, 32611, United States
H S Kim
Affiliation:
[email protected], University of Florida, MSE, Gainesville, FL, 32611, United States
D P Norton
Affiliation:
[email protected], University of Florida, MSE, Gainesville, FL, 32611, United States
J J Chen
Affiliation:
[email protected], University of Florida, Chemical Engineering, Gainesville, FL, 32611, United States
H T Wang
Affiliation:
[email protected], University of Florida, Chemical Engineering, Gainesville, FL, 32611, United States
B S Kang
Affiliation:
[email protected], University of Florida, Chemical Engineering, Gainesville, FL, 32611, United States
F Ren
Affiliation:
[email protected], University of Florida, Chemical Engineering, Gainesville, FL, 32611, United States
W T Lim
Affiliation:
[email protected], University of Florida, MSE, Gainesville, FL, 32611, United States
J Wright
Affiliation:
[email protected], University of Florida, MSE, Gainesville, FL, 32611, United States
R Khanna
Affiliation:
[email protected], University of Florida, MSE, Gainesville, FL, 32611, United States
L F Voss
Affiliation:
[email protected], University of Florida, MSE, Gainesville, FL, 32611, United States
L Stafford
Affiliation:
[email protected], University of Florida, MSE, Gainesville, FL, 32611, United States
J Jun
Affiliation:
[email protected], University of Florida, ECE, Gainesville, FL, 32611, United States
Jenshan Lin
Affiliation:
[email protected], University of Florida, ECE, Gainesville, FL, 32611, United States
Get access

Abstract

The development of new etching and contact metallurgies for the ZnO/ZnMgO/ZnCdO materials system and various approaches for realizing ZnO LEDs are reviewed. ZnO nanorod MOSFETs and pH sensors have been demonstrated. In addition, selective detection of hydrogen with Pt-coated single ZnO nanorods is discussed discussed. The Pt-coated single nanorods show a current response approximately a factor of three larger at room temperature upon exposure to 500ppm H2 in N2 than thin films of ZnO. The power consumption of these sensors can be very small (in the nW range) when using discontinuous coatings of Pt. Once the Pt coating becomes continuous, the current required to operate the sensors increases to the μW range. The ZnO nanorods are insensitive to oxygen in the measurement ambient.

Keywords

reactive ion etchingdevicesmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K01-05
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Look, D. C., Claflin, B., Alivov, Y. I. et al., Phys Status Solidi A 201, 2203 (2004)Google Scholar
2. Alivov, Y. I., Kalinina, E. V., Cherenkov, A. E. et al., Appl Phys Lett 83, 4719 (2003).Google Scholar
3. Reynolds, D. C., Look, D. C., and Jogai, B., Solid State Commun 99, 873 (1996).Google Scholar
4. Aoki, T., Hatanaka, Y., and Look, D. C., Appl Phys Lett 76, 3257 (2000).Google Scholar
5. Lim, J. H., Kim, K. K., Hwang, D. K. et al., J Electrochem Soc 152, G179 (2005).Google Scholar
6. Tsukazaki, A., Ohtomo, A., Onuma, T. et al., Nat Mater 4, 42 (2005).Google Scholar
7. Tsukazaki, A., Kubota, M., Ohtomo, A. et al., Japanese Journal of Applied Physics Part 2-Letters & Express Letters 44, L643 (2005).Google Scholar
8. Jiao, S. J., Zhang, Z. Z., Lu, Y. M. et al., Appl Phys Lett 88 (2006).Google Scholar
9. Ryu, Y. R., Lee, T. S., Leem, J. H. et al., Appl Phys Lett 83, 4032 (2003).Google Scholar
10. Guo, X. L., Choi, J. H., Tabata, H. et al., Jpn J Appl Phys 2 40, L177 (2001).Google Scholar
11. Alivov, Y. I., Van Nostrand, J. E., Look, D. C. et al., Appl Phys Lett 83, 2943 (2003).Google Scholar
12. Hosono, H., Ohta, H., Hayashi, K. et al., J Cryst Growth 237, 496 (2002).Google Scholar
13. Osinsky, A., Dong, J. W., Kauser, M. Z. et al., Appl Phys Lett 85, 4272 (2004).Google Scholar
14. Dong, J. W., Osinsky, A., Hertog, B. et al., J Electron Mater 34, 416 (2005).Google Scholar
15. Hwang, D. K., Kang, S. H., Lim, J. H. et al., Appl Phys Lett 86 (2005).Google Scholar
16. Inumpudi, A., Iliadis, A. A., Krishnamoorthy, S. et al., Solid State Electron 46, 1665 (2002).Google Scholar
17. Kim, H. K., Han, S. H., Seong, T. Y. et al., J. Electrochem Soc 148, G114 (2001).Google Scholar
18. Kim, S. H., Kim, K. K., Park, S. J. et al., J. Electrochem Soc 152, G169 (2005).Google Scholar
19. Kim, H. K., Adesida, I., Kim, K. K. et al., J. Electrochem Soc 151, G223 (2004).Google Scholar
20. Kim, H. K., Seong, T. Y., Kim, K. K. et al. Jpn J Appl Phys 1 43, 976 (2004).Google Scholar
21. Kim, S. H., Maeng, J. T., Choi, C. J. et al., Electrochem Solid St 8, G167 (2005).Google Scholar
22. Kim, S., Kang, B. S., Ren, F. et al., Appl Phys Lett 84, 1904 (2004).Google Scholar
23. Pearton, S. J., Norton, D. P., Ip, K. et al., Prog Mater Sci 50, 293 (2005).Google Scholar
24. Ip, K., Thaler, G. T., Yang, H. S. et al., J Cryst Growth 287, 149 (2006).Google Scholar
25. Look, D. C., Mat Sci Eng B-Solid 80, 383 (2001).Google Scholar
26. Ozgur, U., Alivov, Y. I., Liu, C. et al., J Appl Phys 98 (2005).Google Scholar
27. Pearton, S. J., Norton, D. P., Ip, K. et al., J Vac Sci Technol B 22, 932 (2004).Google Scholar
28. Lee, J. M., Kim, K. K., Park, S. J. et al., Appl Phys Lett 78, 3842 (2001).Google Scholar
29. Sheng, H., Emanetoglu, N. W., Muthukumar, S. et al., J Electron Mater 31, 811 (2002).Google Scholar
30. Kim, S. Y., Jang, H. W., Kim, J. K. et al., J Electron Mater 31, 868 (2002).Google Scholar
31. Ip, K., Heo, Y. W., Baik, K. H. et al., Appl Phys Lett 84, 544 (2004).Google Scholar
32. Kim, S. H., Jeong, S. W., Hwang, D. K. et al., Electrochem Solid St 8, G198 (2005).Google Scholar
33. Kim, H. K., Kim, K. K., Park, S. J. et al., Jpn J Appl Phys 2 41, L546 (2002).Google Scholar
34. Heo, Y.W. et al, Mat. Sci.Eng R 35,206 (2005).Google Scholar