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A Detailed Study of Cu(In,Ga)Se2 Thin Films by Electron-Beam-Induced-Current and Cathodoluminescence

Published online by Cambridge University Press:  21 March 2011

M.J. Romero ,
F.S. Hasoon ,
M.M. Al-Jassim ,
R. Garcia  and
R. Noufi
M.J. Romero
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393, Phone: 303-384-6653, Fax: 303-384-6604, Email: [email protected]
F.S. Hasoon
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393, Phone: 303-384-6653, Fax: 303-384-6604, Email: [email protected]
M.M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393, Phone: 303-384-6653, Fax: 303-384-6604, Email: [email protected]
R. Garcia
Affiliation:
Universidad de Cadiz, Cadiz, Spain
R. Noufi
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393, Phone: 303-384-6653, Fax: 303-384-6604, Email: [email protected]
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Abstract

Cu(In,Ga)Se2 (CIGS) thin films were deposited using the three-stage process. At the third stage, an amount of Indium was added to the CIGS that is greater than the standard used in processing high-efficient CIGS solar cells. The effects of Indium excess and substrate temperature were then investigated by electron-beam-induced-current (EBIC) and cathodoluminescence (CL). The addition of more indium compared to the standard noticeably affects the ZnO/CdS/CIGS heterojunction. On the other hand, the substrate temperature primarily affects the luminescence behavior of these films. It is suggested than In enrichment and Na incorporation play a main role in the electronic properties of the film. From these results, the efficiencies obtained for this set of CIGS cells are finally understood.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H5.22
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swatzlander, A., Hasoon, F., and Noufi, R., Prog. Photovolt. Res. Appl. 7, 311 (1999).Google Scholar
[2] Gabor, A.M., Tuttle, J.R., Albin, D.S., Tennant, A.L., Contreras, M.A., and Noufi, R., AIP Conf. Proc. 306. Proc. 12th NREL Photovoltaic Program Review Meeting (AIP, New York, 1994), p. 59.Google Scholar
[3] Zhang, S.B., Wei, S.-H. and Zunger, A., Phys. Rev. Lett. 78, 4059 (1997).Google Scholar
[4] Kimura, R., Nakada, T., Fons, P., Yamada, A., Niki, S., Matsuzawa, T., Takahashi, K., Kunioka, A., Solar Energy Mat. Solar Cells 67, 289–295 (2001).Google Scholar
[5] Dirnstorfer, I., Hofmann, D. M., Meister, D. and Meyer, B.K., J. Appl. Phys 85, 1423–1425 (1999).Google Scholar
[6] Rockett, A., Bopdegard, M., Granath, K., and Stolt, L., 25th Photovoltaic Specialist Conference; May 13-17, 1996; Washington DC. Google Scholar