Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-04T15:24:15.739Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of II/VI thin films from Novel Single-Source Precursors

Published online by Cambridge University Press:  11 February 2011

Mohammad Afzaal ,
Mohammad Azad Malik ,
Paul O'Brien  and
Jin-Ho Park
Mohammad Afzaal
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]
Mohammad Azad Malik
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]
Paul O'Brien
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]
Jin-Ho Park
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]
Get access

Abstract

The compound [MeCd(SePiPr2)2N]2 is used as a single-source precursor to cadmium selenide films in a low-pressure chemical vapour deposition process. Thermogravimetric analysis (TGA) shows that the precursor is reasonably volatile, making it suitable for the deposition of thin films. As-deposited films were identified as CdSe confirmed by X-ray powder diffraction (XRPD) and their morphologies were studied by scanning electron microscope (SEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.21
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chung, G. Y., Kim, H.-D., Ahn, B.-T. and Im, H.-B., Thin Solid Films. 232, 28 (1993).Google Scholar
[2] Yoshikawa, A., Yamaga, S., Tanaka, K. and Kasai, H., J. Cryst. Growth. 72, 13 (1985).Google Scholar
[3] Frigo, D. M., Khan, O. F. Z. and O'Brien, P., J. Cryst. Growth. 96, 989 (1989).Google Scholar
[4] Hursthouse, M. B., Malik, M. A., Motevalli, M. and O'Brien, P., Polyhedron. 11, 45 (1992).Google Scholar
[5] Evans, M. A. H. and Williams, J. O., Thin Solid Films. 87, L1 (1982).Google Scholar
[6] Osaka, K. and Yamamoto, T., Inorg. Chem. 30, 2328 (1991).Google Scholar
[7] Bochmann, M., Webb, K. J., Harman, M. and Hursthouse, M. B., Angew. Chem, Int. Ed. Engl. 638, 29 (1990).Google Scholar
[8] Dabbousi, B. O., Bonasia, P. J. and Arnold, J., J. Am. Chem. Soc. 113, 3186 (1991).Google Scholar
[9] Malik, M. A. and O'Brien, P., Mater. Chem. 3, 999 (1991).Google Scholar
[10] Malik, M. A., Motevalli, M., O'Brien, P. and Walsh, J. R., Organometallics. 11, 3436 (1992).Google Scholar
[11] Afzaal, M., Crouch, D., O'Brien, P. and Park, J.-H., Mat. Res. Soc. Symp. Proc. 730, V3.5.1 (2002).Google Scholar
[12] Cupertino, D., Birdsall, D. J., Slwain, A. M. Z. and Woollins, J. D., Inorg. Chim. Acta. 290, 1 (1999).Google Scholar
[13] Malik, M. A. and O'Brien, P., Adv. Mater. Opt. Electron. 3, 171 (1994).Google Scholar
[14] Weller, R. G. and Dimmock, J. O., Phy. Rev. 125, 1805 (1962).Google Scholar