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Defect Structures and Electrical Behavior of Rapid Thermally Annealed Ion Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

D. K. Sadana
D. K. Sadana*
Affiliation:
IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
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Abstract

The importance of the knowledge of implantation induced damage structures in annealing studies is emphasized. The existence of various observed microstructures is reviewed and their distributions are presented schematically. It was found that although the usefulness of RTA in controlling dopant profiles is indisputable, the control of microstructure by RTA especially in “non-amorphized” or incompletely amorphized Si samples is questionable. Significance of complete surface amorphization to achieve better structural perfection on subsequent RTA or FA is discussed. An attempt was made to explain the published electrical data on rapid thermally annealed B+ and As+ implanted Si based on expected location and annealing behavior of defects for such implants. Recent structural and electrical results from B implanted pre-amorphized Si are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 319
Copyright
Copyright © Materials Research Society 1987

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References

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