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Defect Pair Formation by Implantation-Induced Stresses in High-Dose Oxygen Implanted Silicon-on-Insulator Material

Published online by Cambridge University Press:  22 February 2011

J.D. Lee ,
J.C. Park ,
D. Venables ,
S.J. Krause  and
P. Roitman
J.D. Lee
Affiliation:
Chemical, Bio & Materials Engineering, Arizona State University, Tempe, AZ 85287
J.C. Park
Affiliation:
Chemical, Bio & Materials Engineering, Arizona State University, Tempe, AZ 85287
D. Venables
Affiliation:
Chemical, Bio & Materials Engineering, Arizona State University, Tempe, AZ 85287
S.J. Krause
Affiliation:
Chemical, Bio & Materials Engineering, Arizona State University, Tempe, AZ 85287
P. Roitman
Affiliation:
Semiconductor Electronics Div., NIST, Gaithersberg, MD 20899
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Abstract

Defect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 753
Copyright
Copyright © Materials Research Society 1994

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References

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