Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-03T02:45:54.352Z Has data issue: false hasContentIssue false
  • English
  • Français

CW Laser Annealed Small-Geometry NMOS Transistors

Published online by Cambridge University Press:  22 February 2011

A.A. Naem ,
A.R. Boothroyd  and
I.D. Calder
A.A. Naem
Affiliation:
Dept. of Electronics, Carleton University, Ottawa, Canada,
A.R. Boothroyd
Affiliation:
Dept. of Electronics, Carleton University, Ottawa, Canada,
I.D. Calder
Affiliation:
Northern Telecom Electronics Ltd., Ottawa, Canada K1Y 4H7
Get access

Abstract

Small geometry NMOS transistors were fabricated using junctions implanted with 1016; Asplus;/cm2; @ 180 keV and annealed through 1067 Å of SiO 2; with a cw argon laser. Phosphosilicate glass densification was the only other high temperature step. Channel lengths were varied from 1.3 to 50 μ. and channel widths from 1 to 50,μ. Physical characterization of these devices revealed a junction depth of 3000 Å with negligible lateral diffusion. The smallest transistor had approximately a square channel with WxL = 1×l.3μ2;. IDS;−VDS; characteristics of this device were similar to those of large geometry devices due to counteracting short and narrow channel effects. The threshold voltage was 0.61±0.013 V across an entire wafer, while there was no punch-through for VDS;<13 V and no avalanche breakdown for VDS; < 14 V. The junctions showed a forward-biased ideality factor of 1.17, and the contact resistance in an 8 × 8 μ2; area was 1.5Ω to the source/drain regions and 0.5Ω to laser-recrystallized polysilicon interconnects. It is concluded that cw laser annealing can be used to fabricate small-geometry devices with excellent performance and without any deleterious effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 229
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Gat, A., Gibbons, J.F., Magee, T.J., Peng, J., Williams, P., Deline, V. and Evans, C.A. Jr., Appl. Phys. Lett. 33, 389 (1978).Google Scholar
2.Teng, T.C., Merritt, J.D., Velez, J., Peng, J., and Palkuti, L., Electron. Lett. 16, 477 (1980).Google Scholar
3.Teng, T.C., Shiau, Y., de Ornellas, S., Readdie, J., Wong, E., Chang, G., Ko, S., and Skinner, C., Electron. Lett. 17, 628 (1981).Google Scholar
4.Yoshida, M., Okabayashi, H., and Ishida, K., Jap. J. Appl. Phys. 20, 2121 (1981).Google Scholar
5.Tamura, M., Natsuaki, N., Miyao, M., Ohkura, M., Murai, F., Takeda, E., Minagawa, S. and Tokuyama, T., in “Laser and Electron-Beam Interactions with Solids”, p. 567 (North-Holland, New York 1982).Google Scholar
6.Lax, M., Appl. Phys. Lett. 33, 786 (1978).Google Scholar
7.Nissim, Y.I., Lietoila, A., Gold, R.B. and Gibbons, J.F., J. Appl. Phys. 51, 224 (1980).Google Scholar
8.Masetti, G., Severi, M., and Solmi, S., Electrochem. Soc. Ext. Abst. 83–1, 639 (1983).Google Scholar
9.Calder, I.D., in “Energy Beam-Solid Interactions and Transient Thermal Processing”, (North-Holland, New York 1984).Google Scholar
10.Kirchev, C.J., J. Appl. Phys. 46, 2169 (1975).Google Scholar
11.Proctor, S.J. and Linholm, L.W., IEEE Electron Dev. Lett. EDL–3, 294 (1982).Google Scholar
12.Beinvogl, W., Deppe, H.R., Stokan, R., and Hasler, B., IEEE Trans. Electron Dev., ED–28, 1332, (1981).Google Scholar