Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-26T02:53:39.317Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystal Stability and Microstructural Evolution in Polycrystalline Si Films During Ion Irradiation

Published online by Cambridge University Press:  21 February 2011

Harry A. Atwater  and
Walter L. Brown
Harry A. Atwater
Affiliation:
California Institute of Technology, Pasadena, CA 91125
Walter L. Brown
Affiliation:
A.T.&T. Bell Laboratories, Murray Hill, N.J. 07974.
Get access

Abstract

Amorphous Si is nucleated heterogeneously at grain boundaries during irradiation of polycrystalline Si by 1.5 MeV Xe+ ions for temperatures of 150–225°C. Following formation at grain boundaries, the amorphous Si layer grows at a rate comparable to the growth rate of a pre-existing amorphous-crystal interface, resulting in a decrease in average grain size and a marked change in the grain size distribution. The heterogeneous nucleation kinetics of amorphous Si are strongly dependent on grain boundary structure. A simple atomistic model for amorphous phase formation, which suggests that the nucleation kinetics are dependent on the point defect mobilities and grain boundary structure, is related to the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 107
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Rutter, J. W. and Aust, K. T., Acta Met. 13 181 (1965).Google Scholar
[2] Glicksman, M. E. and Vold, C. L., Surf. Sci., 31, 50 (1972).Google Scholar
[3] Broughton, J. Q. and Gilmer, G. H., Phys. Rev. Lett., 56, 2692 (1986); and references cited therein.Google Scholar
[4] Leiberich, A., Maher, D. M., Knoell, R. V. and Brown, W. L., Proceedings of the 5th International Conference on the Ion Beam Modification of Materials, Catania, (1986); R. G. Elliman, J. Linnros, and W.L. Brown, Mat. Res. Soc. Symp. 100, 363 (1988).Google Scholar
[5] Atwater, H. A., Thompson, C. V. and Smith, H. I., Phys. Rev. Lett., 60,112 (1988); H. A. Atwater, C.V. Thompson and H. I. Smith, Mat. Res. Soc. Symp. 100, 345 (1988).Google Scholar
[6] Theory of Transformations in Metals and Alloys, Christian, J. W., Pergamon, New York, (1975), pp. 526–534.Google Scholar
[7] Wetzel, J. T., Levi, A. A., and Smith, D. A., in Grain Boundary Structure and Related Phenomena, edited by Ishida, Y., Japan Institute of Metals International Symposium, Vol.4, (Japan Institute of Metals, Miyagi, 1986, pp. 1061–1067.Google Scholar
[8] Kohyama, M., Yamamoto, R., and Doyama, M., in Grain Boundary Structure and Related Phenomena, edited by Ishida, Y., Japan Institute of Metals International Symposium, Vol.4, (Japan Institute of Metals, Miyagi, 1986, pp. 99–106.Google Scholar
[9] Watkins, G. D., in Radiation Damage in Semiconductors, Dunod, Paris, 1965, p. 97.Google Scholar
[10] Van Vechten, J. A., Phys. Rev. B, 10, 1482 (1974).Google Scholar